OPERATING METHOD OF BIPOLAR SEMICONDUCTOR DEVICE AND BIPOLAR SEMICONDUCTOR DEVICE

摘要

A bipolar semiconductor device having a silicon carbide epitaxial film grown from the surface of a silicon carbide single crystal substrate, in which electrons and holes are recombined during conduction in the silicon carbide epitaxial film and expansion of lamination defect area caused by continuous conduction is suppressed. In an operating method of a bipolar semiconductor device, a current is passed through the SiC bipolar semiconductor device while maintaining the temperature environment at 350°C or above.