| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of attaining refinement in a cell and high voltage resistance in a terminal. SOLUTION: The semiconductor device 1 for power includes: the cell 2 for allowing an electric current to flow, and the terminal 3 enclosing the cell 2. The semiconductor device 1 includes: a semiconductor substrate 4, and an insulating film 5 formed on the semiconductor substrate 4. The upper surface of the semiconductor substrate 4 in the terminal 3 is positioned lower than the upper surface of the semiconductor substrate 4 in the cell 2. The thickness of the insulating film 5 in the terminal 3 is thicker than that of the insulating film 5 in the cell 2. COPYRIGHT: (C)2008,JPO&INPIT
|
