发明名称 |
Plasma deposition apparatus and deposition method utilizing same |
摘要 |
A plasma deposition apparatus is provided. The plasma deposition apparatus comprises a chamber. A pedestal is placed in the chamber. A plasma generator is placed in the chamber and over the pedestal. The plasma generator comprises a plasma jet for plasma thin film deposition having a discharge direction angle theta<SUB>1 </SUB>of 0° to 90° between a normal direction of the pedestal and the discharge direction of the plasma jet. A gas-extracting apparatus is placed in the chamber and over the pedestal. The gas-extracting apparatus comprises a gas-extracting pipe providing a pumping path for particles and side-products having a pumping direction angle theta<SUB>2 </SUB>of 0° to 90° between the normal direction of the pedestal and the pumping direction of the gas-extracting pipe.
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申请公布号 |
US2008032063(A1) |
申请公布日期 |
2008.02.07 |
申请号 |
US20060644861 |
申请日期 |
2006.12.21 |
申请人 |
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUE |
发明人 |
CHANG CHIA-CHIANG;WU CHIN-JYI;LIAW SHIN-CHIH;LIN CHUN-HUNG |
分类号 |
C23C16/00;H05H1/24 |
主分类号 |
C23C16/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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