Resist lower layer material, resist lower layer substrate comprising the material and method for forming pattern

摘要

Provided is a method for forming a resist lower layer material for use in a multilayer resist process, especially two-layer resist process or three-layer resist process, having a function of neutralizing an amine contaminant from a substrate, thereby reducing a harmful effect such as trailing skirts of a resist pattern of an upper layer resist. Specifically, there is provided a material for forming a lower layer of a chemically amplified photoresist layer comprising a crosslinkable polymer and a thermal acid generator that can generate an acid by heating at 100° C. or greater and is represented by the general formula (1a): R¹CF₂SO₃^-(R²)₄N⁺, (1a) as well as a resist lower layer substrate comprising a resist lower layer formed using said material.