发明名称 Semiconductor device contact resistant to deterioration due to heat and method for manufacturing contact
摘要 A Contact according to an aspect of the present invention is formed by laminating a shape memory alloy film on a surface of a metal spring film, and the shape thereof is a conical spiral. A manufacturing method therefor is composed of 11 steps including a step of preparing a sacrificial metal film, a step of forming a resist cone, a step of patterning a resist film, a step of preparing a shape memory alloy film, and the like. Since an organic resist material has poor heat resistance, the sacrificial metal film is formed in advance, the resist is removed before sputtering of the shape memory alloy film, the sacrificial metal film is removed after sputtering of a shape memory alloy and a heat treatment, which are performed at high temperatures, so as to lift off an excess shape memory alloy film.
申请公布号 US2008032519(A1) 申请公布日期 2008.02.07
申请号 US20070825192 申请日期 2007.07.03
申请人 ALPS ELECTRIC CO., LTD. 发明人 MURATA SHINJI
分类号 H01R12/00 主分类号 H01R12/00
代理机构 代理人
主权项
地址