发明名称 |
PHOTORESIST COMPOSITION AND PATTERNING METHOD THEREOF |
摘要 |
<p>Disclosed is a resist composition which has desirable physical properties such as sensitivity, resolution, residual film ratio and coating property, and forms a pattern having the desirable profile and depth of focus due to excellent light transmissivity during a semiconductor process and a flat panel display process using a short wavelength of 248 nm (KrF) or less, even though the resist composition is applied to a non-chemically amplified resist. The photoresist composition comprises a novolac-based resin A, a photosensitizer B, and a low molecular substance C having low absorbance. The low molecular substance having low absorbance has absorbance that is lower than absorbance of the novolac-based resin at one or more wavelengths of 248 nm, 193 nm, and 157 nm, and the photoresist composition is used at the wavelength of 248 nm or less.</p> |
申请公布号 |
WO2008016270(A1) |
申请公布日期 |
2008.02.07 |
申请号 |
WO2007KR03726 |
申请日期 |
2007.08.02 |
申请人 |
DONGWOO FINE-CHEM. CO., LTD.;SUNG, SHI-JIN;LEE, SANG-HAENG;KIM, SANG-TAE |
发明人 |
SUNG, SHI-JIN;LEE, SANG-HAENG;KIM, SANG-TAE |
分类号 |
G03F7/004 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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