| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method that allows a desired pattern to be formed on a substrate by reducing LWR. <P>SOLUTION: After a first etched film 22 and a patterned photoresist film 23 are formed on a semiconductor substrate 21, a fluorocarbon-based deposit 24 is adhered to a side wall of the photoresist film 23. At this time, a thicker deposit 24 is adhered to a resist film projection 23a than to a resist film projection 23b, and subsequently the adhered deposit 24 is slightly etched. At this time, stronger etching is carried out to a deposit 24b that is adhered to a projection than to a deposit 24a that is adhered to a recess. This allows the recess of the photoresist film to be filled up by the deposit, and allows the deposit adhered to the projection to be minimized, thus making it possible to reduce LWR more significantly than by conventional methods. <P>COPYRIGHT: (C)2008,JPO&INPIT |
