发明名称 METHOD OF FORMING SIMULATION MODEL, PROGRAM, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a method that can provide an extremely accurate simulation model. <P>SOLUTION: The method comprises steps of obtaining a CD value of a photoresist pattern actually formed based on a test pattern, obtaining information regarding the form of the photoresist pattern, determining the light intensity distribution of an optical image from simulation based on the test pattern, determining an experimental threshold defined by the CD value on the light intensity distribution corresponding to the CD value of the photoresist pattern, determining a feature amount of an optical image based on the light intensity distribution of the optical image, determining a first correlation between the information on the form of the photoresist pattern and the feature amount of the optical image, determining a second correlation between the information on the form of the photoresist pattern and the feature amount of the optical image, and determining a third correlation between the feature amount of the optical image and the experimental threshold using the first and second correlation. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007324479(A) 申请公布日期 2007.12.13
申请号 JP20060155142 申请日期 2006.06.02
申请人 TOSHIBA CORP 发明人 SATAKE MASAKI;SANHONGI SHOJI
分类号 H01L21/027 主分类号 H01L21/027
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