| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an integrated compound semiconductor light-emitting device excellent in in-plane uniformity of light emission intensity and capable of large-area light emission like a surface light source. <P>SOLUTION: The integrated compound semiconductor light-emitting device has a plurality of light-emitting units 11 formed on a transparent substrate 21. Each of the light-emitting units has thin film crystal layers 24, 25, 26, and first and second conductivity-type side electrodes 27, 28. A light extracting direction is a substrate side. The first and second conductivity-type-side electrodes are formed on the opposite side to the light extracting direction. The light-emitting units are electrically separated from each other by inter-light-emitting units separating trenches 12. Further, the device has an optically coupling layer 23 commonly provided between the plurality of light-emitting units between the substrate and a first conductivity-type clad layer, optically coupling the light-emitting units and distributing a light in the entire integrated compound semiconductor light-emitting device. <P>COPYRIGHT: (C)2008,JPO&INPIT |
