发明名称 PLASMA PROCESSING DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a plasma processing device wherein damages are prevented by preventing creeping discharge on the side end surfaces of an electrode, and particles are prevented from being generated while reducing maintenance frequency. <P>SOLUTION: A first electrode 31 and a second electrode 32 are surrounded by a casing 10 of metal, and they are made to face each other to form a discharge space 23 between them. A dielectric member 51 made of a solid dielectric is provided on the surface of the first electrode 31 facing the second electrode 32. The dielectric member 51 is extended from both end parts of the first electrode 31 to form a pair of third directional extension parts 53. A side part insulating space 71 to insulate the first electrode 31 from the casing 10 is demarcated by the first electrode 31, a first electrode 31 side portion stretched from the discharge space 23 of the casing 10, and the third directional extension parts 53 of the dielectric member 51. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007323836(A) 申请公布日期 2007.12.13
申请号 JP20060149764 申请日期 2006.05.30
申请人 SEKISUI CHEM CO LTD 发明人 ONO TSUYOSHI
分类号 H05H1/24;C23C16/50 主分类号 H05H1/24
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