| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and an apparatus for growing a GaN bulk single crystal without causing cracks. SOLUTION: The apparatus for growing the GaN bulk single crystal has a reaction chamber 20 equipped with: a first gas inlet tube 21, a second gas inlet tube 22, and a third gas inlet tube 23 for supplying an NH<SB>3</SB>gas an N<SB>2</SB>gas, and an HCl gas, respectively; and a gallium source storing unit 24 connected to the third gas inlet tube 23 and supplying gallium to the HCl gas. The method for growing the GaN bulk single crystal includes a step for providing a susceptor 30 on which a GaN seed crystal is provided in the reaction chamber 20, a step for growing the GaN bulk single crystal on the GaN seed crystal, and a step for cooling the grown GaN bulk single crystal and separating the GaN bulk single crystal from the susceptor 30. A seed crystal-accommodating portion with a recess of a given depth is formed on an upper surface of the susceptor 30 so that only upper surface of the GaN seed crystal is exposed in the reaction chamber 20, and the GaN seed crystal is provided on a bottom surface of the seed crystal-accommodating portion. COPYRIGHT: (C)2008,JPO&INPIT |
