发明名称 SOLID STATE PHOTOGRAPHING DEVICE AND MANUFACTURING METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To provide a solid state photographing device for improving the smear characteristic and photo-sensitivity characteristic, and to provide its manufacturing method. SOLUTION: The solid state photographing device is provided with: a semiconductor substrate 11; two or more photoelectric conversion devices 13 arranged in the two-dimensional shape on the semiconductor substrate 11; a first transfer electrode film 15 and a second transfer electrode film 15A for transmitting a signal charge produced at the photoelectric conversion device 13; a carbon-based black filter layer 21 arranged above the second transfer electrode film 15A at a portion, where the second transfer electrode 15A of single layer is formed; and a pigment-based black filter layer 20 arranged above the first transfer electrode film 15 and the second transfer electrode film 15A at a portion, where the first transfer electrode film 15 and the second transfer electrode film 15A are laminated. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007324481(A) 申请公布日期 2007.12.13
申请号 JP20060155183 申请日期 2006.06.02
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 YOKOZAWA KENJI
分类号 H01L27/14;H01L27/148;H04N5/335;H04N5/359;H04N5/369 主分类号 H01L27/14
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