Method for forming a memory device with at least one memory cell, in particular a phase change memory cell, and memory device

摘要

A method for forming a memory device with at least one memory cell, the memory cell including a volume of switching active material is disclosed. The method includes the process of depositing a first layer of insulating material on a substrate, depositing a layer of switching active material on the layer of insulating material, patterning the layer of switching active material to form volumes of switching active material. A second layer of insulating material is deposited. Vias are formed in the layers of the first insulating material, the switching active material and the second layer of insulating material in one method process. The vias are filled with a conductive material to form first and second electrode contacts for electrically coupling the volumes of switching active material. Furthermore the invention relates to a memory device produced by using this method.