发明名称 Optical semiconductor device with sensitivity improved
摘要 An optical semiconductor device containing a photodiode, includes a first semiconductor layer of a first conductive type; and a channel layer of a second conductive type formed from a surface portion of the first semiconductor layer in a light receiving region. The channel layer and the first semiconductor layer in the light receiving region form a p-n junction region.
申请公布号 US2007284624(A1) 申请公布日期 2007.12.13
申请号 US20070802967 申请日期 2007.05.29
申请人 NEC ELECTRONICS CORPORATION 发明人 IWAI TAKESHI
分类号 H01L29/76;H01L29/745 主分类号 H01L29/76
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