PLANAR LIGHT EMISSION SEMICONDUCTOR LASER AND ITS MANUFACTURING METHOD

摘要

Provided is a planar light emission semiconductor laser which can be easily manufactured at a low cost and can stabilize the polarization direction of the laser light into one direction and increase the output. The semiconductor laser includes a light emission unit (20) having a lower first DBR mirror layer (12), a lower second DBR mirror layer (13), a lower spacer layer (14), an active layer (15) having a light emission region (15A), an upper spacer layer (16), a current narrowing layer (17), an upper DBR mirror layer (18), and a contact layer (19) which are layered in this order on a substrate (10). The lower first DBR mirror layer (12) includes an oxidized portion (30) arranged around a region corresponding to the light emission region (15A) and unevenly distributed in the direction of rotation around the light emission region (15A). The oxidized portion (30) is formed by a pair of multi-layer films (31, 32) obtained by oxidizing a low-reflectance layer (12A). This generates an anisotropic stress corresponding to the uneven distribution of the multi-layer films (31, 32) in the active layer (15).