ETCHING METHOD, ETCHING MASK, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE EMPLOYING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor etching method capable of easily etching even an semiconductor layer hardly to be etched, such as a group III-V nitride semiconductor by a comparatively simple process.

SOLUTION: The semiconductor etching method has a process of forming a metal fluoride layer at a temperature of not less than 150°C as at least one part of an etching mask 3 to be formed on a semiconductor layer 2; a process of patterning the metal fluoride layer; and a process of etching the semiconductor layer using the patterned metal fluoride layer 3 as a mask.

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