| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high frequency semiconductor device which can prevent leakage of higher harmonic noise between a plurality of built-in semiconductor chips and suppress the occurrence of deviation of impedance matching in respective input and output terminals. <P>SOLUTION: The semiconductor device is built in a package, including: a plurality of high frequency semiconductor chips 2L and 2H; a non-rectangular die pad 8 connecting rectangular die bonding areas 8L and 8H equipped with the high frequency semiconductor chips respectively; a plurality of lead terminals 7AL, 7AH, 7BL and 7BH electrically connecting electrode pads 4L, 4H, 5L and 5H of the high frequency semiconductor chips to the outside of the package, respectively; and wires 6AL, 6BL, 6AH and 6BH electrically connecting the lead terminals and the electrode pads, respectively. A distance between an external end of each die bonding area and the corresponding lead terminal connected by the wire to the input and output electrode pads of the corresponding high frequency semiconductor chip mounted in the corresponding die bonding area is equal to each other. <P>COPYRIGHT: (C)2008,JPO&INPIT |
