| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of quantifying impurities in the surface of a semiconductor substrate wherein an ion intensity ratio and a surface impurity concentration are measured for a standard sample of a semiconductor substrate by TOF-SIMS (Time-of-Flight Secondary Ion Mass Spectrometry), and a calibration curve between them is created in advance; and then an ion intensity ratio is measured for an unknown semiconductor substrate by TOF-SIMS, and an impurity concentration of the unknown substrate is quantified from the calibration curve. SOLUTION: By doping an impurity, epitaxial layers having a different impurity concentration are grown to fabricate the standard sample of a semiconductor substrate. Then, the ion intensity ratio is measured for the standard sample of a semiconductor substrate by TOF-SIMS. The measured values of the impurity concentration and the ion intensity ratio are plotted on a graph to create the calibration curve between them. By measuring the ion intensity ratio of the unknown semiconductor substrate surface by TOF-SIMS, the impurity concentration of the unknown semiconductor substrate is quantified using the calibration curve. COPYRIGHT: (C)2008,JPO&INPIT
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