MONOLITHICALLY-PUMPED ERBIUM-DOPED WAVEGUIDE AMPLIFIERS AND LASERS

摘要

Disclosed is a method of doping an oxide. The example method includes forming at least one of an AlGaAs oxide or an InAlP oxide on a GaAs substrate, and incorporating Erbium into the at least one AlGaAs oxide or InAlP oxide via ion implantation to form an Erbium-doped oxide layer, The example method also includes annealing the substrate and the at least one AlGaAs oxide or InAlP oxide.