| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a structure of an integrated compound semiconductor light-emitting device suitable for large-area light emission like a surface light source, and to provide a manufacturing method thereof. <P>SOLUTION: The integrated compound semiconductor light-emitting device having a plurality of light-emitting units formed on a transparent substrate 21. Each of the light-emitting units 11 has thin-film crystal growing layers 24, 25, 26, and first and second conductivity-type side electrodes 27, 28. A light extracting direction is the substrate side. The first and second conductivity-type-side electrodes are formed on the opposite side to the light extracting direction. The light-emitting units are electrically separated from each other by inter-light-emitting unit separating trenches 12 formed by removing a portion from the surface of a thin-film crystal growing layer to one part of a buffer layer 22. <P>COPYRIGHT: (C)2008,JPO&INPIT |
