| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which is excellent in electrical characteristic by preventing a substrate from being cut due to overetching in formation of first and second stress applying films. SOLUTION: When first and second silicon nitride films 7, 8 are formed for an increase of ON current of a channel of a transistor in an NMOS region 1 and a PMOS region 2, a silicon oxide film 6 and a polycrystalline silicon film 21 which are excellent in selectivity in etching are formed as an etch stopper and a sacrificial film, and thereafter the films 6, 21 are partially removed by etching and the first and second silicon nitride films 7, 8 are formed one by one. Consequently, it is possible to prevent a substrate 10 from being cut in removal of a part of the first and second silicon nitride films 7, 8 by etching, thus improving electrical characteristic of a finally obtained semiconductor device. COPYRIGHT: (C)2008,JPO&INPIT
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