PLASMA ETCHING METHOD, PLASMA PROCESSING APPARATUS, CONTROL PROGRAM AND COMPUTER READABLE STORAGE MEDIUM

摘要

A plasma etching method includes the step of: etching a silicon layer of a target object by using a plasma generated from a processing gas containing a fluorocarbon gas, a hydrofluorocarbon gas, a rare gas and an O₂ gas and by employing a patterned resist film as a mask. The target object includes the silicon layer whose main component is silicon and the patterned resist film formed over the silicon layer.