发明名称 Thin film magnetic memory device suitable for drive by battery
摘要 After a digit line is charged to a power supply voltage by turn-on of a first switching element, the first switching element is turned off and a second switching element is turned on, whereby the digit line is connected to a ground voltage. Similarly, in order to feed data write current, a bit line is charged to a data voltage in accordance with write data through a third switching element. Then, the bit line is connected to a voltage different from the data voltage by a fourth switching element while the third switching element is turned off. Therefore, a load current from a power supply to an MRAM device is supplied during charging of a digit line capacitance and a bit line capacitance, without being consumed when the data write current flows. Consequently, a peak of the load current supplied from the power supply is suppressed.
申请公布号 US2007285977(A1) 申请公布日期 2007.12.13
申请号 US20070882577 申请日期 2007.08.02
申请人 RENESAS TECHNOLOGY CORP. 发明人 HIDAKA HIDETO
分类号 G11C11/14;G11C11/15 主分类号 G11C11/14
代理机构 代理人
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