| 摘要 |
A method of etching decoupled comb electrodes by self-alignment is provided The etching method is a self-alignment etching method for forming upper comb electrodes in a first silicon layer of a silicon on insulator (SOI) substrate and lower comb electrodes in a second silicon layer of the SOI substrate. The self-alignment etching method includes forming a first metal mask on the first silicon layer so as to cover portions of the first silicon layer where the upper comb electrodes are to be formed, forming a first photoresist (PR) mask on the first metal mask and portions of the first silicon layer corresponding to the lower comb electrodes, selectively etching the first silicon layer using the first PR mask as an etch barrier layer, selectively etching an insulating layer of the SOI substrate using the first PR mask as an etch barrier layer, selectively etching the second silicon layer of the SOI substrate using the first PR mask as an etch barrier layer, forming a second PR mask on portions of the second silicon layer corresponding to the upper comb electrodes, forming a second metal mask entirely on an exposed bottom surface of the second silicon layer including the second PR mask, removing the first and second PR masks, and etching the first and second silicon layers using the remaining first and second metal masks so as to form the upper comb electrodes and the lower comb electrodes.
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