METHOD OF FABRICATING PMOS THIN FILM TRANSISTOR

摘要

A method of fabricating a p-type thin film transistor (TFT) includes: performing a first annealing process on a substrate to diffuse a metal catalyst through a capping layer into a surface of an amorphous silicon layer, and to crystallize the amorphous silicon layer to a polycrystalline silicon layer due to the diffused metal catalyst; removing the capping layer; patterning the polycrystalline silicon layer to form a semiconductor layer; forming a gate insulating layer and a gate electrode on the substrate; implanting p-type impurity ions into the semiconductor layer; and implanting a gettering material into the semiconductor layer and performing a second annealing process to remove the metal catalyst. Herein, the p-type impurity ions are implanted at a dose of 6x10¹³/cm² to 5x10¹⁵/cm², and the gettering material is implanted at a dose of 1x10¹¹/cm² to 3x10¹⁵/cm².