| 摘要 |
The memory element includes a first conductive layer, a second conductive layer, a layer containing a compound which can exhibit liquid crystallinity which is interposed between the first conductive layer and the second conductive layer, and a layer containing an organic compound which is interposed between the first conductive layer and the second conductive layer and is in contact with the layer containing the compound which can exhibit liquid crystallinity. The layer containing the compound which can exhibit liquid crystallinity is formed in contact with the first conductive layer and is a layer which transfers at least from a first phase to a second phase.
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