| 摘要 |
A semiconductor device of the present invention is includes a semiconductor device comprising: a semiconductor chip having a passivation film on an electrode forming surface thereof on which a plurality of electrodes are formed; a protective film which is provided on an upper surface of the passivation film and patterned into a predetermined form; rewiring which is provided on an upper surface of each portion of the protective film divided by patterning and is connected to the electrode; a post connected to the rewiring; and a sealing resin layer which covers the rewiring.
|
