GALLIUM NITRIDE SEMICONDUCTOR AND METHOD FOR MANUFACTURING THE SAME

摘要

A nitride semiconductor and a method for manufacturing the same are provided to control a lattice structure by forming an intermediate layer. An intermediate layer forming process is performed to form an intermediate layer on a substrate(100-1) in order to be matched with a nitride epitaxial layer in a lattice matching manner. A nitride forming process is performed to form a nitride on the intermediate layer. The nitride is used for forming the nitride epitaxial layer. The process for forming the intermediate layer includes a process for depositing a rare-earth element oxide on the substrate, and a process for forming a rare-earth element silicate layer(200-1b) by performing a thermal process in a temperature range of 500 to 2000 degrees centigrade.