| 摘要 |
A method of manufacturing a TN mode, MVA mode or IPS active matrix substrate for an LCD apparatus uses a photolithographic process four times. The invention adopts a halftone exposure technology with a halftone mask, and preferably a nitrogen ion doped technology, to form a gate electrode, a common electrode, a pixel electrode, and a contact pad. A second halftone mask is then used to form a thin film semiconductor layer and a contact hole. Next, a general exposure technology is used to form at least a source electrode and a drain electrode, followed by contact holes for the terminals of the gate, common and pixel electrodes. |
