发明名称 SPUTTERING TARGET, INTERLAYER FILM FOR PHASE CHANGE OPTICAL RECORDING MEDIUM USING THE SAME AND ITS MANUFACTURING METHOD, AND PHASE CHANGE OPTICAL RECORDING MEDIUM
摘要 <P>PROBLEM TO BE SOLVED: To provide a sputtering target capable of film-forming a metal compound film excellent in both of a crystallization facilitating function and optical characteristics in regard to the sputtering target used in film-forming, etc. of an interlayer film of a phase change optical recording medium. <P>SOLUTION: The sputtering target has a composition expressed as M(O<SB>1-x</SB>N<SB>x</SB>)<SB>z</SB>in which M is at least one kind of element selected from Ti, Zr and Hf, and x and z respectively satisfy 0<x&le;0.7 and 0.5&le;z&le;2.0 (atomic ratio), or as (M<SB>1-a</SB>Cr<SB>a</SB>)(O<SB>1-x</SB>N<SB>x</SB>)<SB>z</SB>in which M is at least one kind of element selected from Ti, Zr and Hf, and a, x and z respectively satisfy 0.1&le;a&le;0.5, 0<x&le;0.7 and 0.5&le;z&le;2.0 (atomic ratio). A metal oxide/nitride film formed by using such a sputtering target is used for interlayers 4, 6, etc. of the phase change optical recording medium 1. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007239061(A) 申请公布日期 2007.09.20
申请号 JP20060065558 申请日期 2006.03.10
申请人 TOSHIBA CORP;TOSHIBA MATERIALS CO LTD 发明人 SAKAMOTO TOSHIYA;SUZUKI YUKINOBU;WATANABE KOICHI;KOSAKA YASUO
分类号 C23C14/34;C04B35/58;G11B7/24;G11B7/254;G11B7/257;G11B7/26 主分类号 C23C14/34
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