SINGLE CRYSTAL SILICON INGOT AND WAFER PRODUCED BY ADJUSTING PULLING SPEED PROFILE IN HOT ZONE

摘要

PROBLEM TO BE SOLVED: To provide a method for producing a microelectronic element and an apparatus therefor, in detail, a method for producing a silicon ingot; and to provide the silicon ingot produced by the method and a wafer. SOLUTION: The silicon ingot is produced by pulling an ingot in an axial direction from a melt in a hot zone furnace by an ingot pulling speed profile which is sufficiently high to prevent an interstitial mass and is sufficiently low to restrict a vacancy mass in a zone V rich in vacancy. The ingot thus pulled is sliced into zones V rich in vacancy containing each vacancy mass at the center and a plurality of semi-zero defect wafers W1to W4having a zero defect zone P free from a vacancy mass and an interstitial mass though being positioned between the zone V rich in vacancy and the edge part of the wafers. COPYRIGHT: (C)2007,JPO&INPIT