发明名称 SUBSTRATE PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To improve the throughput by shortening a waiting time of transfer. SOLUTION: The CVD apparatus 10 includes a processing chamber 21 for processing a wafer 1 on a boat 31, a waiting chamber 12 connected to the processing chamber 21 and is evacuated to the vacuum condition, a vacuum exchanging chamber 44 connected to the waiting room 12 with a gate valve 46 in the side of waiting chamber, a negative pressure wafer moving apparatus 38 for moving the wafer 1 between the boat 31 and the vacuum exchanging chamber 44, a positive pressure moving chamber 62 connected to the vacuum exchanging chamber 44 with a gate valve 48 in the side of positive pressure, and a positive pressure wafer moving apparatus 63 for moving the wafer 1 between the positive pressure moving chamber 62 and the vacuum exchanging chamber 44. In this CVD apparatus 10, a tweezer 39 is set for preparation at the most proximity position A of the gate valve 46 in the side of waiting chamber, before the gate valve 46 in the side of waiting chamber opens and the wafer can be transferred with the negative pressure wafer moving apparatus 38. Moreover, a tweezer 64 is set for preparation at the most proximity position B of the gate valve 48 in the side of positive pressure before the gate valve 48 in the positive pressure side opens, and the wafer can be transferred with the positive pressure wafer moving apparatus 63. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007242764(A) 申请公布日期 2007.09.20
申请号 JP20060060803 申请日期 2006.03.07
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 NIIMURA NORIHIRO
分类号 H01L21/677;C23C16/44;H01L21/205 主分类号 H01L21/677
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