| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a diode chip in which direct high-dense mounting on a circuit board without using wires and deterioration can be performed and variation in impedance characteristics in an electrode terminal is suppressed, by providing a pair of electrode terminals each corresponding to a p-type semiconductor region and an n-type semiconductor region on one surface of a silicon substrate. <P>SOLUTION: The diode chip 21 is provided with a silicon substrate 22 having the n-type region 23; the p-type region 24 formed in the n-type region 23; and the pair of electrode terminals 25, 26 formed on any one of the upper surface and the lower surface of the silicon substrate 22, and corresponding to the n-type region 23 and the p-type region 24. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
