BARRIER FILM FOR SEMICONDUCTOR WIRING, COPPER WIRING FOR SEMICONDUCTOR, MANUFACTURING METHOD OF THIS WIRING, AND SPUTTERING TARGET FOR FORMING SEMICONDUCTOR BARRIER FILM

摘要

PROBLEM TO BE SOLVED: To provide a barrier film for a highly dense copper wiring semiconductor which can obtain a sufficient barrier effect with a thin film thickness enough to prevent film peeling and an approximating narrow wiring width, in suppressing diffusion of copper to an approximate highly dense copper wiring, and has no variation in barrier characteristics even if a temperature rises due to heat treatment, and to provide a sputtering target for forming the barrier film. SOLUTION: The barrier film for a highly dense copper wiring semiconductor consists of a Co-Cr alloy film containing Cr of 5-30 wt.%, wherein the residue consists of inevitable impurities and Co, the film thickness is 3-150 nm and film thickness uniformity is not more than 10% at 1σ. The sputtering target for forming barrier film is a Co-Cr alloy containing 5-30 wt.% Cr having the residue consisting of inevitable impurities and Co. A relative permeability in an in-plane direction of a sputtering face is not more than 100. COPYRIGHT: (C)2007,JPO&INPIT