发明名称 |
Compound Semiconductor Light-Emitting Device And Production Method Thereof |
摘要 |
A pn-junction compound semiconductor light-emitting device is provided, which comprises a stacked structure including a light-emitting layer composed of an n-type or a p-type aluminum gallium indium phosphide and a light-permeable substrate for supporting the stacked structure, and the stacked structure and the light-permeable substrate being joined together, wherein the stacked structure includes an n-type or a p-type conductor layer, the conductor layer and the substrate are joined together, and the conductor layer is composed of a Group III-V compound semiconductor containing boron.
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申请公布号 |
US2007215886(A1) |
申请公布日期 |
2007.09.20 |
申请号 |
US20050594065 |
申请日期 |
2005.03.28 |
申请人 |
TAKEUCHI RYOUICHI;NABEKURA WATARU;UDAGAWA TAKASHI |
发明人 |
TAKEUCHI RYOUICHI;NABEKURA WATARU;UDAGAWA TAKASHI |
分类号 |
H01L21/00;H01L33/00;H01L33/16;H01L33/30;H01L33/40;H01L33/56;H01L33/62 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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