Semiconductor device including MOS transistor having LOCOS offset structure and manufacturing method thereof

摘要

A disclosed semiconductor device includes: a semiconductor substrate; at least one normal transistor disposed on the semiconductor substrate; and at least one LOCOS offset transistor disposed on the semiconductor substrate. The normal transistor has an LDD region between a channel and a source and between the channel and a drain. And the LOCOS offset transistor has no LDD region between a channel and a source and between the channel and a drain.