| 摘要 |
A method for fabricating a semiconductor device is provided to prevent occurrence of bad device by cutting a portion of an adhesive layer with a first blade and then cutting a portion of dicing tape with a second blade. An adhesive layer(22) and a dicing tape(23) is laminated on a rear surface of a semiconductor wafer(21) having plural element regions. The semiconductor wafer is cut along the element regions together with a part of the adhesive layer by using a first blade(25) in cutting depth reaching the adhesive layer. The adhesive layer is cut together with a part of the dicing tape by using a second blade in a cutting depth reaching the dicing tape. A semiconductor element sectioned by cutting the semiconductor wafer with the adhesive layer is picked up from the dicing tape. The picked semiconductor element is adhered on a device constructing base via the adhesive layer. |
