| 摘要 |
A method of forming a buffer layer for a nitride compound semiconductor light emitting device and a nitride compound semiconductor light emitting device are provided to form an AlN compound layer between a substrate and a semiconductor layer, thereby reducing an interface space between the AlN compound layer and the buffer layer or semiconductor layer formed on the AlN compound layer. A sapphire substrate(10) is positioned in a reaction chamber, and then a nitrogen source gas is introduced into the reaction chamber. The sapphire substrate is subjected to annealing in a state where the nitrogen source gas is introduced into the reaction chamber, to form an AlN compound layer on a surface of the sapphire substrate. A nitride compound buffer layer(30) is formed on the AlN compound layer.
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