| 摘要 |
<P>PROBLEM TO BE SOLVED: To carry out a quantification of a variation of a degree of polarization of an exposure light, and thereby to make it possible to clearly specify a polarization state of the exposure light reaching a wafer substrate. <P>SOLUTION: By a semiconductor exposure device, an illumination light is reached on the wafer substrate through an exposure mask and a projection optical system, and a pattern image made by the exposure mask is transferred on the wafer substrate. The exposure device comprises: a first polarizer 2 which changes the illumination light into a linear polarization state at an arrangement position of the exposure mask; a photodetector 5 which detects an optical intensity at an arrangement position of the wafer substrate; a second polarizer 6 which changes a light coming into the photodetector 5 on a light incidence surface to the photodetector 5 into a linear polarization state with a predetermined angle with respect to the linear polarization state made by the first polarizer 2; and polarization recognizing means 8 which compares detecting results by the photodetector 5 in a case through the projection optical system, and in a case not through the projection optical system, and abstracts the variation of the degree of polarization by the projection optical system based on the comparing results. <P>COPYRIGHT: (C)2007,JPO&INPIT |
