| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of detecting the deterioration of a semiconductor device for detecting element deterioration at a stage of minute deterioration (slight deterioration). SOLUTION: The method of detecting the deterioration of the semiconductor device comprises determining that IGBT3 has deteriorated, when a set value is reached in which VGE is determined as having deteriorate in a power cycle test making power loss fixed by performing VCE control of IGBT3 by VGE control; interrupting a circuit current 7, by switching off IGBT2 and IGBT3 with a signal from a sequencer unit 5; removing IGBT3 from a power cycle test circuit; and readily conducting failure analysis, thereafter, by detecting the deterioration of IGBT3 at an early stage. COPYRIGHT: (C)2007,JPO&INPIT
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