| 摘要 |
Aiming at obtaining stable and uniform element isolation characteristics without forming the oxide film liner or the like on the inner wall surface of the isolation trench, and ensuring a sufficient level of adhesiveness of the insulating material filled in the isolation trench, and obtaining uniform and excellent element isolation characteristics and a sufficient level of adhesiveness of the buried insulating material, even when applied to large-diameter semiconductor substrates, a thermal oxide film is formed on the inner wall surface of isolation trenches, and a silicon semiconductor substrate is then annealed using a lamp annealer at a temperature higher than in the process of forming thermal oxide film, typically at 950° C. for a predetermined short time (30 seconds herein, for example), wherein the annealing modifies at least the surficial portion of thermal oxide film to have a further complete and uniform state of oxidation.
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