| 摘要 |
<p>The present invention provides a method of forming a buffer layer for a nitride compound semiconductor light emitting device, comprising the steps of placing a sapphire (Al<SUB>2 </SUB>O<SUB>3</SUB>) substrate in a reaction chamber; introducing a nitrogen source gas into a reaction chamber; and annealing the sapphire (Al<SUB>2</SUB> O<SUB>3</SUB> ) substrate in a state where the nitrogen source gas is introduced into the reaction chamber, to form an AlN compound layer on a surface of the sapphire substrate. According to the present invention, the AlN compound layer having intermediate properties between those of the substrate and a semiconductor layer is formed between the substrate and the semiconductor layer. Thus, an interface space between the AlN compound layer and the buffer layer or the semiconductor layer that is to be formed on the AlN compound layer becomes smaller and a crystal stress also becomes smaller, thereby effectively reducing a crack that may be generated due to differences in lattice constant and thermal expansion coefficient between the substrate and the semiconductor layer.</p> |
