| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing liquid having a high planarizing performance mainly in a polishing process of a copper wiring by providing an unevenness dependency to oxidization efficiency of a metal surface and combining with polishing by abrasive grain. <P>SOLUTION: The polishing liquid contains water dispersion material of an oxidation compound insoluble in water, abrasive particles, immobility film formation agent and organic acid, and mainly used for polishing the copper wiring of a semiconductor device. As the oxidation compound insoluble in water, a poly halogenated compound expressed with a general formula (A) Q-(Y)<SB>n</SB>-C(Z<SP>1</SP>)(Z<SP>2</SP>)X is desirable. In the general formula (A), Q is an alkyl group, an aryl group or a heterocycle group, Y is a divalent linking group, n is 0 or 1, Z<SP>1</SP>and Z<SP>2</SP>are halogen atoms independently, and X is a hydrogen atom or an electron-withdrawing group. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
