发明名称 ACTIVE MATRIX CIRCUIT
摘要 PROBLEM TO BE SOLVED: To improve an area ratio (an aperture ratio) of a display electrode, and to prevent lowering of thin film transistor (TFT) characteristics caused by incidence of light on the TFT, in an active matrix circuit using the TFT as a switching element. SOLUTION: A light shielding area is reduced by arranging a channel of the TFT under a source wire. Additionally, because the source wire is in this way superposed on the channel of the TFT, light incident on the TFT from the upside is cut off with the source wire and does not reach the TFT, and consequently the lowering of the TFT characteristics caused by external light is prevented. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007241315(A) 申请公布日期 2007.09.20
申请号 JP20070152354 申请日期 2007.06.08
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 ZHANG HONGYONG
分类号 G02F1/1368;H01L29/786 主分类号 G02F1/1368
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