HIGH FREQUENCY SWITCH CIRCUIT, AND SEMICONDUCTOR DEVICE USING SAME

摘要

PROBLEM TO BE SOLVED: To provide a high frequency switch circuit capable of improving maximum input power without incurring deterioration in isolation characteristics by individually controlling gate widths of FETs in a multi-stage according to the power received by each FET. SOLUTION: Current capacity of the FET at a high frequency signal input side is made greater than current capacity of the FET at a high frequency signal output side in the FETs of the multi-stage configuration to improve the maximum input power and the gate width of the FET at the high frequency signal output side is made to be narrower to prevent deterioration in the isolation characteristics. COPYRIGHT: (C)2007,JPO&INPIT