| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging device having improved optical characteristics by reducing variations in FD capacity. SOLUTION: Pixel arrays are provided each consisting of cells 101 arranged in matrix. Each of cells 101 is provided with a photodiode 102; FD 103; transfer transistor 111; reset transistor 112; amplification transistor 108 in which a gate electrode is connected to the FD 103, a drain is connected to a power source line 106, and a source is connected to a vertical signal line 107; and FD wiring 120. The power source line 106 is arranged on a first wiring layer, and the vertical signal line 107 is arranged on a second wiring layer positioned on the upper part of the first wiring layer. Since the potential of the FD wiring 120 follows the potential of the vertical signal line 107, variations can be suppressed in capacity generated in the FD 103 when the position of the vertical signal line 107 is shifted in accordance with the position of the cells 101. COPYRIGHT: (C)2007,JPO&INPIT
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