| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method capable of obtaining an SOI wafer with an SOI layer having a uniform film thickness. SOLUTION: The manufacturing method for the SOI wafer has a process in which at least the SOI wafer having the SOI layer on an insulator is oxidized and treated thermally, an oxide film is formed on the surface of the SOI layer and the film thickness of the SOI layer is reduced by removing the oxide film. In the manufacturing method for the SOI wafer, the in-plane film-thickness distribution of the SOI layer is measured before the SOI layer 2 is oxidized and treated thermally, and a thermal oxidation treatment is conducted so that the in-plane temperature of the SOI layer in a region having the thick film thickness of the SOI layer is made higher than that in the region having the thin film thickness of the SOI layer on the basis of a measured value. COPYRIGHT: (C)2007,JPO&INPIT
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