SEMICONDUCTOR DEVICE

摘要

The semiconductor device which has the resistor element which was formed in the SOI layer of an SOI substrate and suppressed the influence of leak to the minimum is obtained. N⁺ diffusion region is selectively formed in an SOI layer, and a full isolation region is formed covering all the peripheral regions of N⁺ diffusion region. A full isolation region penetrates an SOI layer, and reaches a buried oxide film, and N⁺ diffusion region is electrically thoroughly insulated from the outside by the full isolation region. N⁺ diffusion region extends in the longitudinal direction in a drawing, and is formed in lengthwise rectangular shape in plan view. And a silicide film is formed in the front surface at the side of one end of N⁺ diffusion region, a silicide film is formed in the front surface at the side of the other end, and a metal plug is formed on a silicide film, respectively.