| 摘要 |
To produce a structure of a micro-electro-mechanical system (MEMS) in a hermetic cavity ( 38 ) of a microelectronic device ( 50 ), a prepared cover ( 30 ) and substrate ( 10 ) are bonded by means of silicon direct bonding (SDB). To optimise the preparation of surfaces by means of wet cleaning without impairing the properties of the MEMS ( 22 ), i.e. without causing adhesions, the MEMS structure ( 22 ) is not released during bonding, but attached to the base ( 12 ) by means of a sacrificial intermediate layer ( 16 ). Said layer is removed once bonding has been carried out by injecting HF vapour via a vent ( 40 ) opening into the cavity ( 38 ).
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