发明名称 |
FORMATION OF OXIDATION-RESISTANT SEED LAYER FOR INTERCONNECT APPLICATIONS |
摘要 |
An interconnect structure of the single or dual damascene type and a method of forming the same, which substantially reduces the surface oxidation problem of plating a conductive material onto a noble metal seed layer are provided. In accordance with the present invention, a hydrogen plasma treatment is used to treat a noble metal seed layer such that the treated noble metal seed layer is highly resistant to surface oxidation. The inventive oxidation-resistant noble metal seed layer has a low C content and/or a low nitrogen content.
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申请公布号 |
US2007216031(A1) |
申请公布日期 |
2007.09.20 |
申请号 |
US20060308284 |
申请日期 |
2006.03.15 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
YANG CHIH-CHAO;KLYMKO NANCY R.;PARKS CHRISTOPHER C.;WONG KEITH K.H. |
分类号 |
H01L23/48;H01L21/4763 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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